inchange semiconductor isc product specification isc silicon pnp power transistor BDX14 description continuous collector current-i c = -4a collector-emitter sustaining voltage- : v ceo(sus) = -55v(min.) applications designed for general purpose switching and amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -90 v v cer collector-emitter voltage r be = 100 -60 v v ceo collector-emitter voltage -55 v v ebo emitter-base voltage -7 v i c collector current-continuous -4 a i b b base current-continuous -2 a p c collector power dissipation@t c =25 29 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 6.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BDX14 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = -100ma; i b = 0 -55 v v cer(sus) collector-emitter sustaining voltage i c = -100ma; r be = 100 -60 v v (br)ebo emitter-base breakdown voltage i e = -1ma; i c = 0 -7 v v ce (sat) collector-emitter saturation voltage i c = -0.5a; i b = -50ma b -1.0 v v be( on ) base-emitter on voltage i c = -0.5a; v ce = -4v -1.7 v i cex collector cutoff current v ce = -90v; v be = 1.5v v ce = -30v; v be = 1.5v,t c =150 -1.0 -5.0 ma h fe dc current gain i c = -0.5a; v ce = -4v 25 100 f t current gain-bandwidth product i c = -0.2a; v ce = -10v 4 mhz isc website www.iscsemi.cn 2
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